dated : 21/12/2005 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) MMBTSC1009 npn silicon epitaxial transistor fm/am rf amplifier, mixer, oscillator, converter. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 50 v collector emitter voltage v ceo 30 v emitter base voltage v ebo 5 v collector current i c 50 ma power dissipation p tot 200 mw junction temperature t j 125 o c storage temperature range t s -55 to +125 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at v ce = 6 v, i c = 1 ma current gain group o y h fe h fe 60 90 - - 120 180 - - collector saturation voltage at i c = 10 ma, i b = 1 ma v ce(sat) - - 0.3 v base emitter voltage at v ce = 6 v, i c = 1 ma v be 0.65 - 0.75 v emitter cutoff current at v eb = 5 v i ebo - - 0.1 a collector cutoff current at v cb = 50 v i cbo - - 0.1 a gain bandwidth product at v ce = 6 v, -i e = 1 ma f t 150 250 - mhz output capacitance at v cb = 6 v, f = 1 mhz c ob - 1.9 2.2 pf collector base time constant at v cb = 6 v, f = 31.9 mhz, -i e = 10 ma c c.rb?b - 10 15 ns noise figure at v ce = 6 v, -i e = 1 ma. f = 1 mhz, r g = 500 ? nf - 2 4 db sot-23 plastic package
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